Abstract
We investigate transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states in disordered graphene is also discussed.
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