Sn/SiO2 single crystals growth by the hydrothermal method at high temperatures and pressures

Abstract

α-quartz-type materials are of much interest for their use in many applications. The growth of α-Si1−xSnxO2 single crystals was realized by the hydrothermal method at high temperatures and pressures in a Cr–Ni alloy autoclave. As the mineralizer, a NaOH (1.0 M) solution was used. Nutrient material was prepared from synthetic quartz. Si1−xSnxO2 single crystals with α-quartz structure were investigated in terms of x-ray diffraction and energy dispersive x-ray analyses. Fourier transform infrared spectroscopy reveals that the optical quality factor, known as the material Q, of Si1−xSnxO2 (x=0.006) single crystals is 3.7×105 and 2.4×105 for wavenumbers of 3410 and 3500 cm−1, respectively.