Abstract
The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance—the experimental signal for quantum resonance effects—and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.
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