Abstract
The difficulties in developing generalized computer design tools for smart-power semiconductor electronics, a highly specialized field requiring a mix of analog and digital integrated-circuit design, unique semiconductor-device-fabrication technology, and knowledge of application-specific power systems, are examined. These include the problem of dealing with the double-diffused MOS (DMOS) transistor, as well as the simulation of trench refill processes, 2D oxidation phenomena and their stress-induced effects on avalanche breakdown, and the 3D diffusion of the spherical junctions encountered in high-voltage termination. The complexities associated with 2D simulations are discussed in some detail. Dealing with asymmetric devices and with structures consisting of circles, arcs, and 45 degrees angles is also considered.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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