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Abstract
A small-signal model for an IMPATT diode amplifier is presented. An accurate lumped model, which includes temperature and field-dependent carrier velocities and ionization rates, is used to calculate the chip impedances of the IMPATT diode, as functions of frequency and bias current. The diode package and impedance matching sections of the amplifier are represented by a lumped element equivalent circuit and transmission line equations. The accuracy of this amplifier simulation is confirmed by comparing computed and measured frequency-response behaviour. Additional results are used to illustrate the flexible nature of the model.
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