Abstract
This work presents a comprehensive study of small-signal parameters based on radio frequency (RF) data of a heterojunction tunnel field effect transistor (HJ-TFET). The TFET device shows excellent small-signal analog and RF performance. Numerical device simulations of the optimized HJ-TFET shows ION/IOFF ratio of ~6 orders of magnitude. It is found that gate voltage dependency of HJ-TFET on the intrinsic parameters obtained from the non-quasi static (NQS) model differ from the conventional MOSFET due to band to band tunneling mechanism and inversion layer formation in the device. Based on this mechanism, the high frequency analog and RF performance of HJ-TFET were investigated using TCAD and modeled using NQS model, which was verified upto 100 GHz. The modeling results showed excellent agreement with the simulated small-signal parameters at multiple drain voltages (Vd). f
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