Abstract
Small-signal and noise GaAs pHEMT modeling techniques that include analytical extraction followed by optimization are demonstrated. The following measurement processing steps were carried out before the parameter extraction: de-embedding, data smoothing and selecting the bias mode appropriate for the extraction of parasitic resistances and inductances. A low-noise amplifier operating in 5G frequency band was designed using the resulting model. A comparison between simulation and measurements of noise factor and S-parameters of the obtained low-noise amplifier is presented.
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