Abstract
A state-of-the-art Monte Carlo simulator is applied to the investigation of the radio-frequency performance of bulk and ultrathin-body single-gate SOI MOSFETs that are designed according to the prescriptions of the 2005 ITRS for analog and mixed-signal applications. We provide an analysis of the signal-delay buildup along the channel and an investigation of the scaling properties of the parameters of the ac equivalent circuit, the transition frequency, and the 3-dB bandwidth of the voltage gain in common-source configuration. A comparison with a standard drift-diffusion approach is presented in order to discuss the main differences between the two transport models in terms of high-frequency ac analysis.
Published Version
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