Abstract
The dc electrical conductivity of semiconducting oxide glasses in the (60 − x)V 2O 5–40TeO 2–xSb 2O 3 system with 0 ≤ x ≤ 10,prepared by press quenching method, was studied at temperatures between 305 and 472 K. For the present glasses, the dc conductivities at 334 K were 2.67 × 10 − 6 –4.35 × 10 − 5 Scm − 1 , indicating that the conductivity increased with increasing V 2O 5 concentration. From the conductivity–temperature relation, it was found that the small polaron hopping (SPH) mechanism was applicable at the present temperatures, and the electrical conduction was due to non-adiabatic SPH of electrons between vanadium ions. For glasses with 5 ≤ x ≤ 10, the value of tunneling factor (α) was found to be 2.67 × 10 8 cm − 1 .
Published Version
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