Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2Plasma Oxidation

Abstract

We developed small molecular organic nonvolatile 4F² memory cells using metal layer evaporation followed by O₂ plasma oxidation. Our memory cells sandwich an upper α-NPD layer, Al nanocrystals surrounded by Al₂O₃, and a bottom α-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the V th , V p (program), V e (erase), memory margin (I on /I off ), data retention time, and erase and program endurance were 2.6V, 5.3V; 8.5V, ?1.5×10², 1×10 5 s, and 1×10³ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.