Abstract
Antiferroelectric Sm-doped PbZrO3 (PSZO) thin films were prepared on Pt(111)/Ti/SiO2/Si substrates using a chemical solution deposition method. The effects of Sm doping concentration on structural, morphology, dielectric, antiferroelectric, and energy storage characteristics of PSZO thin films were investigated. With Sm doping, all the thin films were crystallized in perovskite phase along with a strong (111)- preferential orientation. It is found that Sm doping significantly altered the Curie temperature (Tc) and electric field-induced phase switching of the films. The PSZO film with Sm = 0.01 exhibited a maximum polarization of 53.7 μC/cm2, an energy storage density of 17.1 J/cm3 at ~444 kV/cm, and a dielectric constant of 175 at 1 kHz. The improved energy storage performance was attributed to high (111) degree of preferred orientation and site occupation of Sm ions.
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