Energy storage performances of La doping BaBi4Ti4O15 thin films capacitors

Abstract

BaBi4Ti4O15-based thin films, belongs to Aurivillius phase compounds, were fabricated on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method and its energy storage performances were investigated. Here, large recoverable energy storage density (66.8 J/cm3) and high storage efficiency (85.1%) were achieved in the BaBi4Ti4O15 thin film via La doped. Such enhanced energy storage performances can attribute to the improvement of crystallization quality with increase of grain size and decrease of leakage current. In addition, from 20 to 140 °C, no significant changes were observed in energy storage density and efficiency, and the energy storage performance did not decrease significantly after 1.6 × 108 charge–discharge cycles, indicating that the film has excellent thermal stability and fatigue resistance. These results not only show that the BBT-based thin film is a potential energy storage material, but also provide important ideas for further exploration of methods to improve energy storage performance.