Abstract
Chemisorbed water on a silicon surface forms the slow states which act under normal conditions. In agreement with a calculation of the kinetics of chemisorption all relaxations can be accounted for by four distinct time constants. A model for the slow surface states is proposed. The effective chemisorbed water is formed at the boundary between the crystal and the oxygen layer at active centers of the form Si—O—Si . The water forms a coordinative bond with the transfer of a free electron pair to the 3 d shell of the silicon. This bond produces a fast donor surface state. The positive charge of the chemisorbed water is due to the ionization of this donor.
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