Abstract
Slow positron implantation spectroscopy (SPIS), based on the generation, implantation and subsequent annihilation of mono-energetic positrons in a sample, is used to study depth-dependent vacancy-type damage in ion-implanted 6H-SiC. The derivation of physical information from the Doppler-broadened annihilation lineshape is exemplified. It is found that the depth profile of vacancy-type damage formed in SiC co-implanted by Al + and N + at 800 °C, and subsequently annealed at 1200 and 1650 °C, strongly depends on the sequence of implantations and annealing conditions. These studies show that annealing at 1650 °C for 10 min is not sufficient to remove the vacancy-type damage created by ion implantation.
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