Abstract
(SiC) 1− x (AlN) x has been prepared by ion co-implantation of N + and Al + into a 6H-SiC n-type wafer. The substrate temperature during implantation was varied from 200°C to 800°C in order to reduce the damage created by ion implantation. The obtained structures have been investigated by Slow Positron Implantation Spectroscopy (SPIS) and Rutherford Backscattering and Ion Channeling (RBS/C). Both methods are sensitive to different kinds of defects and the results are complementary. The defect structures determined by SPIS and RBS/C are presented and the influence of the variation of the substrate temperature is discussed.
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