Abstract
6H–SiC n-type wafers were implanted with Al + and N + ions in two ways: first Al + followed by N + and vice versa. The implantation was carried out at four different substrate temperatures between 200 and 800°C. Depth profiles of the defects were evaluated from measured Doppler broadening profiles of the annihilation radiation as a function of incident positron energy for both co-implantation sequences. Differences in the defect distribution and in the defect size are shown and discussed.
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