Abstract
Slow dielectric relaxation in barium strontium titanate thin film capacitor structures with strontium ruthenate electrodes has been investigated. It is shown that in the films containing a relatively high vacancy concentration (more than 10 17 cm m 3 ), slow capacitance relaxation during the time interval of several minutes after biasing switching on and off takes place due to the oxygen vacancy accumulation in near-cathode layer and the diffusional spreading of this layer after biasing switching on and off, respectively. At lower vacancy concentration (∼0.5 10 17 cm m 3 ), the considerable capacitance relaxation has not been obtained but transient currents under the step voltage stimulation appear in the time interval of 0.05-2.5 s. These currents are explained by near-electrode Schottky potential barrier capacitances charging and discharging, in combine with the oxygen vacancy redistribution in the film. Relations approximating the relaxation processes have been derived and the corresponding parameter values, close to the published data, have been obtained.
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