Abstract
The relationship between the length of slip dislocation and applied stress in silicon wafers was investigated. Czochralski (CZ) silicon wafers [boron-doped, interstitial oxygen concentration [Oi]=(13.8–14.0)×1017/cm3], indented by a Vickers hardness tester, were thermally stressed by insertion into and withdrawal from a horizontal furnace. The length of slip dislocations generated during the heat treatment was measured by X-ray topography (XRT). To estimate the applied thermal stress during the heat treatment, temperature distribution in the wafer was measured with a thermocouple. From the results of XRT observations, slip dislocations were found to be generated at peripheral and central regions during the insertion and the withdrawal, respectively. The length of slip dislocations was calculated using the experimentally estimated thermal stress. It was found that the length of slip dislocation could be explained well by the model, with consideration of the applied stress and the dislocation velocity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
