Abstract
Slip bands which appear after 4-point bending of liquid encapsulated Czochralski grown zinc doped GaAs (001) wafers at (412…447)°C have been characterized quantitatively both by reflection and transmission microscopy. Slip is initiated at the edges of the tensile part of the specimen. Deformation proceeds by the growth of slip bands in length through the whole specimen and in height up to ≈ 200 nm. Their average distance goes down to ≈ 20 μm within the bending angle interval (0.2…5.9)° investigated. Residual stresses σ1 – σ2 ≈ (8…30) MPa have been detected by stress-induced birefringence measurements in the bent crystals.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
