Abstract
A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared to conventional substrates. Based on the results, a conventional photolithography process was employed to implement the reverse-trapezoid homogeneous structures using a negative photoresist (NPR). Simply accessible photolithography using NPR enabled high-resolution patterning and thus large-area scalable device architectures could be obtained. The a-IGZO TFTs on the reverse-trapezoid-structured PDMS exhibited a maximum saturation mobility of 6.06 cm2V−1s−1 under a drain bias voltage of 10 V with minimal strain stress. As a result, the proposed a-IGZO TFTs, including stress-released architecture, exhibited highly enhanced mechanical properties, showing saturation mobility variation within 12% under a strain of 15%, whereas conventional planar a-IGZO TFTs on PDMS showed mobility variation over 10% even under a 1% strain and failed to operate beyond a 2% strain.
Highlights
A 30% lateral strain was applied to the amorphous indium-gallium-zinc oxide (a-IGZO) TFT by considering the maximum strain of the epidermis [23,24]
We assumed that the underlying mechanism of stress relaxation was the presence of the undercut, transforming the lateral force of strain to a vertical direction without a deteriorative effect on the a-IGZO TFTs
The reverse-trapezoid structure for stretchable a-IGZO TFTs had the effect of releasing the stress induced by the strain
Summary
Stretchable electronic devices are attracting great attention due to their conformable adaptability to the human body [1,2,3]. The advantage of being conformable devices leads to the creation of utilization of wearable s and healthcare monitoring systems, as well as human-machine interfaces, smart skin, and robotics applications [4,5,6,7,8]. The meaningful realization of skin-compatible electronic devices requires achievement of physical parameters that approximate those of the human epidermis to be properly compliant and contact with the skin. The skin-compatible electronic applications should be bent to conform to the skin topography and to be stretchable to accommodate strain from various body motions. Skin-compatible devices can elastically deform with a minimum
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