Abstract
Al thin film is extensively used in micro-electromechanical systems (MEMS) and electronic interconnections; however, most previous research has concentrated on their quasi-static properties and applied their designs on larger scales. The present study designed a paddle-like cantilever specimen with metal films deposited on the upper surface to investigate the quasi-static properties of Al thin film at room temperature under high vacuum conditions at microscopic scales. Energy loss was determined using a decay technique in the oscillation amplitude of a vibrating structure following resonant excitation. Grain size and film thickness size were strictly controlled considering the quasi-static properties of the films. This study found that the internal friction of ultra-thin and thin Al films was more dependent on the grain boundaries than film thickness.
Highlights
Al thin films are popularly utilized for microelectronics manufacturing and packaging.Al thin films used in integrated circuits (ICs) and micro-electromechanical system (MEMS)structures are superimposed on top of layer upon layer and are often directly connected to each other
Thickness of the film was increased from 30 to 289 nm. These results indicated that the internal friction in ultra-thin Al films of less than 0.3 μm decreased with an increase in film thickness
This study proposed a novel approach to the measurement of energy loss and internal friction in Al thin films
Summary
Al thin films are popularly utilized for microelectronics manufacturing and packaging.Al thin films used in integrated circuits (ICs) and micro-electromechanical system (MEMS)structures are superimposed on top of layer upon layer and are often directly connected to each other. Al thin films used in integrated circuits (ICs) and micro-electromechanical system (MEMS). The temperature can be increased or decreased during treatment because the coefficients of thermal expansion between the contact layers become uneven and they create mechanical stress fluctuations. When these stresses are greater than the yield stress of the film or become too large [1,2,3,4], mechanical damage can occur, which could lead to failure. In MEMS, there are moving components that form the system, and these moving components are subjected to dynamic loads by the metal films deposited on the components
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