Abstract
Metal thin films are using as capacitance switches in microelectromechanical systems (MEMS). The better the thin films can resist relaxation, the longer the lifetime of the MEMS device. Al thin films have been used as capacitance switches, but they have only a weak resistance to relaxation and therefore a shorter lifetime. Solid strengthening can improve the mechanism of the material without decreasing other mechanisms. We added Mg to Al thin films in order to increase the stress relaxation resistance. The viscoelastic behavior of pure aluminum thin film in comparison with thin films of different percentages of Mg is investigated by using bulge testing. Adding Mg in pure Al thin films significantly decrease the relaxation behavior and increase the mechanism of thin film. The result shows the more Mg content in Al thin films the more resistance of thin films. The results of experiments show the normalize modulus decreasing less with a greater content of Mg. This result proves that adding more different atoms can obstruct the movement of dislocation and enhance the mechanism of Al thin films. It shows that Al-Mg thin films have better relaxation resistance than Al thin films and thus serve as a better material for MEMS.
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