Abstract
Chemical and size contributions to the band gap bowing of nitride semiconducting alloys (In${}_{x}$Ga${}_{1\ensuremath{-}x}$N, In${}_{x}$Al${}_{1\ensuremath{-}x}$N, and Al${}_{x}$Ga${}_{1\ensuremath{-}x}$N) are analyzed. It is shown that the band gap deformation potentials of the binary constituents determine the gap bowing in the ternary alloys. The particularly large gap bowing in In-containing nitride alloys can be explained by specific properties of InN, which do not follow trends observed in several other binaries.
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