Abstract
We present a low operation voltage pentacene-based non-volatile memory transistor by embedding sub-2 nm size-tunable platinum nanoparticles (Pt NPs) between the tunneling and blocking dielectric layers. Controllable work function was observed in the embedded Pt NPs through the size-dependent threshold voltage shift. Non-volatile memory transistors containing embedded Pt NPs exhibited significant memory windows in their transfer characteristics, which was attributed to charging and discharging behaviors of electrons and holes by the Pt NPs. Additionally, the memory transistor showed controllable Pt NP size- and density-dependent memory window behavior. While devices with small (0.5 nm) Pt NPs demonstrated strong Coulomb blockade and quantum confinement with electron addition energy as large as 1.993 eV, those made with larger (1.8 nm) Pt NPs allowed for storage of a single charge per NP memory.
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