Abstract
The authors report enhancement of photoelectron emission quantum efficiencies from magnesium dots fabricated by electron beam lithography and irradiated by ultraviolet 266 nm (4.66 eV) pulsed laser. The quantum efficiencies (QE) of the dots were measured and compared to a large-area Mg film of the same thickness (20 nm). The enhancement factor f was calculated as the ratio of the two efficiencies for diameters ranging from 43.4 to 55.5 nm. Over this range of diameters, f varied more than an order of magnitude, with the highest enhancement of 38 observed for the 52.2 nm diameter dots (QE = 3.5 × 10−4). The difference in the lux–ampere characteristics of the large-area thin film and the 52.2 nm diameter dots are presented, and its relationship to the generalized n-photon photoelectron emission theory is discussed.
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