Abstract
We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
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