Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching

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We present investigations of the structural and optical properties of in-situ etched, self assembled InAs islands using AsBr3 within a molecular beam epitaxy system. This procedure allows reshaping and downsizing of quantum dots with atomic layer precision. The critical thickness of a second InAs layer on top of a thin GaAs layer covering a first InAs dot layer was investigated by RHEED using the 2D–3D transition due to the Stranski–Krastanov growth mode. In-situ etching of the GaAs spacer layer results in an array of small dips on the surface due to enhanced etching at locally strained areas. The dips influence the nucleation of the second dot layer.