Abstract
The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on the concentration and size distribution of Te inclusions/precipitates in CZT wafers grown by the THM technique, by considering the rate of cooling of the ingots. We measured their distribution along the diameter of the wafers in a conventional slow-cooled and a fast-cooled ingot. The overall average concentration of Te inclusions/precipitates for the slow-cooled sample was less than 1×10 5 cm −3, attesting to their suitability for fabricating thick radiation-detection devices.
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