Abstract
A nanometer-scale site-control technique for individual InAs quantum dots (QDs) has been developed by using scanning tunneling microscope (STM) -assisted nanolithography and self-organizing molecular-beam epitaxy. We find that nanometer-scale deposits can be created on a GaAs surface by applying voltage and current pulses between the surface and a tungsten probe of the STM, and that they act as “nanomasks” on which GaAs does not grow directly. Accordingly, subsequent thin GaAs growth produces GaAs nanoholes above the deposits. By supplying 1.1 ML InAs on this surface, QDs are self-organized at the hole sites, while hardly any undesirable Stranski–Krastanov QDs are formed in the flat surface region. Using this technique with nanometer precision, a QD pair with 45 nm pitch is fabricated.
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