Abstract
Plasmonic hybrid nanostructures are material combinations where the plasmonic metal structure enables optical field confinement, while the other ingredients provide additional functionality, such as emission, absorption, or optical nonlinearity. In particular, epitaxial InAs quantum dots (QDs) embedded in a single-crystal GaAs matrix are highly efficient quantum emitters that can be integrated as plasmonic–semiconductor hybrids to realize various on-chip functions. In this Letter, we demonstrate QD–plasmon coupling in a hybrid structure consisting of site-controlled InAs/GaAs quantum dot chains (QDCs) in the proximity of an Ag film. The optical properties of the QDC–plasmon system are investigated using a cleaved-edge photoluminescence (PL) geometry, which allows us to probe the vertical and horizontal polarizations of the PL emission. We demonstrate plasmonic enhancement of both PL decay rate and vertical polarization of the PL emission with decreasing separation of the QDCs and the Ag film. The ability to couple site-controlled InAs QDCs with surface plasmons is a significant step toward exploitation of high-quality epitaxial quantum dots as gain or loss compensation in subwavelength plasmonic metal structures, such as waveguide networks, quantum plasmonic structures, and metamaterials.
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