Abstract
Today three-dimensional system-in-package integration together with advanced interconnect technologies based on through silicon vias, through encapsulant vias, and microbumps are considered some of the most promising enabling technologies for “More than Moore” solutions. These technologies involve vertical die stacking or chip embedding with high-density interconnects and are based on combinations of process steps that come from formerly strictly separated technology areas. Thus, there is an increasing need to understand a large number of different interface properties, to control and optimize processes, and to avoid defect formation that could affect reliability. This complexity, in terms of design, new materials, and material combinations, also requires the development of new failure analysis tools to support these developments. The application potential of a new fast plasma focused ion beam (FIB) system for metrology and failure analysis is demonstrated in several selected case studies. The higher material removal rate of this system improves the range of application fields and/or the analysis throughput. This makes the plasma-FIB a very attractive tool for the analysis of relatively large interconnect structures without any need for mechanical preparation steps.
Highlights
Today three-dimensional (3-D) system-in-package integration together with advanced interconnect technologies based on through silicon vias (TSV), through encapsulant vias (TEV), and microbumps are considered some of the most promising enabling technologies for “More than Moore” solutions
While focused ion beams (FIBs) have been used very successfully for the sample preparation that is required for advanced CMOS device analysis,[1] these systems are less suited for package-level sample preparation because of the relatively low milling rates (∼103 μm3∕ min), which make the removal of large volumes impractical
While the FIB’s ability to image and mill the region of interest is the key enabler of site-specific sectioning, a number of supporting technologies typically integrated into such systems provide important capabilities that allow the analysis to be completed
Summary
Today three-dimensional (3-D) system-in-package integration together with advanced interconnect technologies based on through silicon vias (TSV), through encapsulant vias (TEV), and microbumps are considered some of the most promising enabling technologies for “More than Moore” solutions. There is an increasing need to understand a large number of different interface properties between different interconnects and with any encapsulation or lamination materials, to control and optimize process steps and layer thicknesses, and to avoid any defect formation that potentially could affect the component’s reliability This complexity in terms of design, new materials, and material combinations requires the development of new system-adequate failure analysis tools capable of providing information on adhesion mechanisms, interdiffusion, and phase formation processes, or on electrical short, crack, and void formation issues. Depending on the material under investigation, both the higher current and the higher sputter efficiency of the Xe significantly improve the range of application fields and/or the analysis throughput This makes the plasma FIB a very attractive tool for the analysis of relatively large interconnect structures without any need of mechanical preparation steps
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