Abstract
We report the observation of site-specific Eu3+ stimulated emission in GaN:Eu laser structures. Two main Eu sites have been identified from emission peaks associated with the D05→F27 transition during above band gap optical pumping with a pulsed N2 laser (337nm): (a) Eux emitting at ∼620nm—present in short cavities (∼100μm), exhibiting stimulated (side) emission threshold and a fast decay time constant (30–35μs); (b) Euy emitting at ∼621nm—present in long cavities (∼7mm) and in surface emission, exhibiting no stimulated emission threshold and a slow decay time constant (150–250μs).
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