Abstract
A variety of Bi3+-activated and Bi3+-Eu3+ codoped Y3GaO6 phosphor samples were obtained by solid-state reaction. The phase purity and crystal structure of the specimens were characterized via powder X-ray diffraction (XRD) analysis and Rietveld refinement. For the single Bi3+-doped Y3GaO6 phosphor, two different PL peaks at 410 and 595 nm were obtained, resulting from the two different Bi3+ sites occupied. The site occupation is driven by Bi3+ ion concentration. There is an energy transfer from the Bi3+ to Eu3+ ions in the YGO:Bi3+,Eu3+ phosphors. Besides, the energy transfer mechanism, efficiencies, quantum efficiency and thermal stability have been discussed in detail, demonstrating that the sample possesses high quantum efficiency and good thermal stability. The high color-rendering index Ra (92.9, and 81.6) and low CCT (3286 K, and 3904 K) of the white light-emitting diodes (WLEDs) clearly indicate that these samples are promising candidates for WLEDs.
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