Abstract
A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e., (Bi, Nd)4Ti3O12 was developed. A spontaneous polarization (Ps) value was 58 μC/cm2 beyond the single crystal data of Bi4Ti3O12. In addition, taking account of the realizable orientation of the film on (100)Si substrate, the expected remanent polarization (Pr) value of (Bi3.5Nd0.5)Ti3O12 film is almost the same with those of widely-used Pb(Zr0.35Ti0.65)O3 films.
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