Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition

Abstract

(111)c- and (100)c-oriented SrRuO3 films were successfully grown on (111)Pt/TiO2/SiO2/(100)Si and (100)LaNiO3/(111)Pt/TiO2/SiO2/(100)Si substrates, respectively, by RF-magnetron sputtering method. On these (111)c- and (100)c-oriented SuRuO3 films, (111)- and (001)/(100)-oriented fiber-textured Pb(Zr0.35Ti0.65)O3 films with 2.0 µm in thickness were grown by metalorganic chemical vapor deposition (MOCVD). Well-saturated polarization-electric field (P-E) hysteresis loops were observed for both films. The remanent polarization (Pr) values of (111)- and (001)/(100)-oriented 2.0 µm-thick Pb(Zr,Ti)O3 (PZT) films were almost the same at approximately 45 µC/cm2 at 200 kV/cm, while the coercive field (Ec) values of these films were slight different at 61 kV/cm and 71 kV/cm, respectively. Moreover, the field-induced strains measured by scanning probe microscopy were also almost the same at approximately 0.2% up to 100 kV/cm. These data show the crystal orientation independence of the remanent polarization and field-induced strain of Pb(Zr0.35Ti0.65)O3 films.