Abstract
The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga+ ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm)−2 can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.
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