Abstract
Site-controlled Ga droplet formation using modification of fluoride surface by electron beam exposure was investigated as a new nanofabrication technique. A single linear array of Ga droplets of approximately 10 nm in diameter on CaF 2 film was obtained using a linearly scanned focused electron beam. The fluctuation of their position from the centerline was found to be about 20 nm, which was smaller than the estimated beam spot size. Independent single Ga droplet of approximately 25 nm in diameter was also formed on the site exposed to a single spot beam.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
