Abstract
The control of formation sites for Ga droplets on epitaxial CaF2 films was investigated by two approaches: alignment on step edges, and local surface modification by focused electron beam exposure. Ga droplets 10 nm in diameter were formed with spacings of 5–30 nm on monolayer step edges on CaF2 surface. Straight and parallel multi-steps were formed using vicinal substrates, and the preferential formation of Ga droplets on these steps was observed. Site control by surface modifications of CaF2 using a focused electron beam exposure was also achieved. Two dimensional dot matrix arrays of Ga droplets were fabricated using this technique. Preliminary results indicating the formation of a GaAs quantum dot array from these site controlled Ga droplets by supplying a molecular beam of As4 were obtained.
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