Abstract
We report full scale calculations with relativistic pseudopotentials of first and second order optical susceptibilities in p-type GaAs-AlAs and Si-SiGe quantum well structures in which the response arises due to excitations between valence minibands. Our results contain several novel features. In particular, the peak value of the frequency dependent susceptibility is controlled by optical transitions originating from regions of the momentum space lying further from the center of the Brillouin zone. The excitation steps that give a quantitative meaning to the optical nonlinearity involve quantum states lying above the semiclassical barrier.
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