SIRIO: A High-Speed CMOS Charge-Sensitive Amplifier for High-Energy-Resolution X-γ Ray Spectroscopy With Semiconductor Detectors

Abstract

A fully integrated pulsed reset charge-sensitive amplifier (CSA) optimized for low-capacitance (<; 100 fF) radiation detectors was developed on a 0.35-μm low-noise CMOS technology. The CSA was successfully tested with a collimated 10-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> silicon drift detector (SDD) and extensively characterized. The experimental setup and the achieved spectrometry results with SDD are described for triangular and trapezoidal shaping filters with peaking times ranging from t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">peak</sub> =0.1-12.8 μs at an operating temperature of -35 °C. With a minimum equivalent noise charge (ENC) of 3.4 electrons rms measured at tpeak