Abstract
We used the spin-on glass solution to fabricate thin transparent SiO2 films on Si, GaAs, and InP. Both pure SiO2, and TiO2-, P2O5-, and In2O3-doped SiO, are fabricated. The normalized reflectance minimum method is used to determine both the film thickness and the refractive index. The refractive index of the film depends on the processing conditions and the dopant concentration. We have measured normalized reflectance and compared it with values calculated for both pure and doped films. The agreement is good. The CF4–O2 sputtering etch rates of the films are investigated as a means to pattern the films to form light-guiding structures.
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