SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

Abstract

We have demonstrated the fabrication and application of a nonvolatile thin-film transistor memory with SiNx charge traps using a ZnO thin film as the active channel layer. The thin film of ZnO was deposited using an atomic-layer deposition process and was subsequently post-annealed in an O2-filled atmosphere. X-ray diffraction and x-ray photoemission results indicated that the O2 annealing process was effective for the crystallinity and stoichiometry of the ZnO films. A saturation field-effect mobility of 6 cm2/Vs, on/off ratio of ≈105, subthreshold slope of 0.7 V/decade, and threshold voltage of −5 V were obtained in transistor operations. Threshold-voltage shift measurements performed for various stress voltages and time durations revealed that these devices had a large memory window of 5.4 V and a long retention time (>10 years) in nonvolatile memory operations.