Abstract

Two V-containing microwave dielectric ceramics, LiMgVO4 and LiZnVO4, with excellent microwave performance were prepared by a solid-state reaction route at relatively low temperatures. Using NH4VO3 to replace V2O5 could effectively reduce the sintering temperature of LiMgVO4 and LiZnVO4 to 720 °C and enhance their microwave dielectric properties. LiMgVO4 ceramics sintered at 720 °C exhibited a permittivity ~9.89, a Q × f value of 30,800 GHz and a temperature coefficient of resonant frequency ~−171 ppm/°C. LiZnVO4 ceramics had a relatively smaller τf value of −114 ppm/°C with a er ~ 7.48, a Q × f value of 27,600 GHz. Further efforts are in progress to search for effective approaches to compensate their large negative τf values to be near zero.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call