Abstract
The feasibility of processing silicon carbide (SiC) and boron carbide (B4C) using a 2.45 GHz single-mode microwave system has been investigated. In order to determine the appropriate sintering conditions, samples were processed under various electric/magnetic (E/H) field ratios. Proportional 50% E/H-field ratios and 100% H-field conditions resulted in higher sample temperatures up to 1500 °C under equivalent microwave power. Sinterability was improved by adding B4C and carbon to SiC, but limited to a thin outer layer of the pellet. While partial densification was observed under all conditions, isolated regions of full densification in microwave-processed B4C samples were observed under 100% H-field mode. Microstructural analysis of microwave-processed SiC with and without additives indicated non-uniform sintering, while B4C showed evidence of relatively homogeneous microstructures.
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