Single-mask multiple lateral nanodiamond field emission devices fabrication technique

Abstract

We report an efficient microfabrication process technique developed to realize multiple lateral diamond field emitter structures on the same wafer using a single mask. Nanodiamond films with grain size of 5–10nm deposited by CH4∕H2∕N2 microwave plasma enhanced chemical vapor deposition were selectively micropatterned using reactive ion etching at an etch rate of 0.5μm∕min. Several nanodiamond lateral field emission diodes and triodes of different emitter geometries and electrode configurations have been batch fabricated on a silicon-on-insulator wafer. Interelectrode spacing down to 2μm was achieved in arrays of devices on a SiO2 dielectric layer. This fabrication process technique, with its single-mask utility, high manufacturability, combined with its reproducibility, is an efficient and cost-effective approach to realize various configurations of field emission structures in wafer process technology. These nanodiamond vacuum nanoelectronic lateral devices hold high-speed and high-frequency operation potential.