Single-grain Si thin-film transistors for analog and RF circuit applications

N Saputra,N Karaki,R Ishihara,A Baiano,S Inoue,J R Long,M Danesh,C.I.M Beenakker,Y Hiroshima,J.W Metselaar

doi:10.1109/esscirc.2007.4430257

Single-grain Si thin-film transistors for analog and RF circuit applications

N Saputra, N Karaki + Show 8 more

https://doi.org/10.1109/esscirc.2007.4430257

Copy DOI

Publication Date: Sep 1, 2007

Affiliation: Delft University of Technology, Epson Information Technology College, Seiko Holdings (Japan)

#Power Supply Rejection Ratio #RF Building Blocks + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.

Full Text