Abstract
Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With fT in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.
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