Single-band quantum transport study of resonant tunneling diodes based on silicene nanoribbons

Abstract

The 1D quantum transport simulations based on a single-band effective-mass Hamiltonian are employed to study resonant tunneling diodes (RTDs) based on width-engineered silicene nanoribbons (SiNRs). Numerical analysis is used to assess the peak and valley current and voltage, peak-to-valley current ratio (PVCR), mean negative differential conductance (NDC), maximum output power $(P_{MAX})$ and intrinsic cut-off frequency $(f_{c})$, for different dimensions of device regions. We find that a typical nanoscale SiNR-based RTD could potentially offer a peak current of $\sim$8mA/$\mu \mathrm{m}^{2}$, PVCR of 1.6, NDC of $\sim$30mS/$\mu \mathrm{m}^{2},P_{MAX}$of $\sim 100\mu$W/$\mu \mathrm{m}^{2}$, and f c of $\sim$3 THz.