Abstract
Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 103. Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.
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