Single ZnO Nanobelt Based Field Effect Transistors (FETs)

Abstract

Electrical properties of single ZnO nanobelt have been examined by fabricating single nanobelt based field effect transistors (FETs). The ZnO nanobelts were grown via non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The detailed structural and optical characterizations confirmed that the grown nanobelts are well-crystalline with the wurtzite hexagonal phase and exhibiting good optical properties. The passivation effect on the electrical characteristics of the as-grown nanobelts was also evaluated by passivating the fabricated FETs with polymethyl methacrylate (PMMA). The passivated single ZnO nanobelt based FETs exhibited higher electrical performance as compared to non-passivated FETs due to reduction in the physically absorbed chemisorbed species such as O-, O2-, O2, or OH- etc. The field effect mobility (micro(eff)) of the fabricated nanobelt based non-passivated and passivated FETs was estimated to be approximately 21.3 and 59 cm2/V x s, respectively. Moreover the carrier concentration and peak transconductance of the fabricated non-passivated and passivated FET were calculated to be approximately 8.73 x 10(17) and approximately 1.86 x 10(18) cm(-3) and approximately 0.76 and 1.4 microS, respectively. This work offers substantial opportunities for further practical electronics and photonics nanodevice applications of ZnO based nanostructures.